0.18/spl mu/m thin oxide CMOS transceiver front-end with integrated T/sub x//R/sub x/ commutator for low cost Bluetooth solutions

This paper presents the improvement of a first RF front end design for Bluetooth without using any antenna switch based on V. Knopik (2002). It consists of reducing the number of inductances, 3 instead of 7, and using thin oxide MOS instead of thick oxide ones without degrading the overall performance. The receiver is composed of a low-noise amplifier and a mixer. The former is suitable for zero IF, quasi zero IF or low IF topology for which NF is 21dB, 16dB and 14dB respectively. The transmitter is composed of an image rejection mixer and a power amplifier. It can deliver 5dBm at the compression point with an image rejection better than -40dBc. The chip has been integrated in 0.18/spl mu/m 1.8V STMicroelectronics RFCMOS technology. It consumes 27mA in TX mode and 5.2mA in RX mode.