Multi-bias dependence of threshold voltage, subthreshold swing, and mobility in G/sup 4/-FETs

Systematic measurements of four-gate SOI transistors (G/sup 4/-FET) are presented. Methods of extraction of the threshold voltage, subthreshold swing, and mobility in the linear region are discussed and results are shown. The extracted parameters demonstrate the complex dependence of the multi-gate biases, which is explained. A new extraction technique for the carrier mobility and effective width of devices with isolated multiple gates is proposed.