GaAs picosecond high-voltage drift diodes

Experimental results of studying recovery dynamics of GaAs diodes based on weakly-doped layers grown by liquid-phase epitaxy are presented. The diodes belong to a class of drift step recovery diodes (DSRDs) and are intended for operation in circuits generating high-power picosecond pulses. The obtained values of recovery rates for the reverse voltage (dU/dt/spl sim/2000V/ns) considerably exceed the highest recovery rates of known picosecond charge-storage diodes (CSDs) and are record values for DSRDs.