Reflection transistor amplifier for decimeter waveband

Results of the research of a new microwave transistor amplifier with high performance at L-band is presented. This component has been constructed using a new amplification principle based on a one-port reflecting amplifier theory. Experimental results show that such class of amplifiers using only one transistor provides a very low power consumption, a higher transmission gain and a low noise figure comparing with conventional single-stage amplifier, making it suitable for amplification at millimeter wave frequencies. Measurements of the amplifier have demonstrated 20 dB gain for >2% f/sub 0/ at L-band, noise figure less than 0.5 dB at ambient temperature (290 K) and a very low power consumption at DC less than 0.5 mW.