Finite elements simulations of piezoresistive sensor of blood pressure

The principle of the piezoresistance effect (PR) of n- and p-Si is presented. A graphical representation of the effect of impurity concentration and temperature on the PR is given. A model of a blood pressure piezoresistive sensor, which is under development in the Laboratory of Architecture and Analyses of Systems, is presented. The FEM simulations of this sensor are used to optimize its layout.