Mg-doped AlGaInP laser diodes with high characteristic temperature

In this paper, we demonstrate Mg-doped AlGalnP LDs with high characteristic temperature. We found that abrupt Mg profiles can be obtained in quaternary alloys like AlGalnP, although significant memory effects are observed in GaAs. Based on this effect, we fabricated AlGalnP LDs with a highly Mg-doped cladding layer. As a result, reliable 650-nm-band LDs with characteristic temperature over 133 K are achieved.