A novel trench gate LDMOS

In this paper a novel trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to the conventional LDMOS structure. Currently, the LDMOS devices are the preferred technology for base station amplifiers and in Power MOSFET switching applications. The Synopsys TCAD simulation results will shows an improvement in the breakdown capability, capacitance and gate charge reduction, and improved transfer curve characteristics as compared with a conventional LDMOS structure.