Submicron scaling InP/InGaAs single heterojunction bipolar transistor technology with f/sub T/ > 400 GHz for >100 GHz applications

We describe a high-speed triple metal InP SHBT technology in this paper. With respect to scaling, we have measured f/sub T/ from 300 GHz to 450 GHz, and f/sub MAX/ from 200 GHz to 380 GHz. The proposed technology also features triple metal interconnections, MIM capacitors and NiCr thin film resistors. A CML static frequency divider is designed and simulated from DC to 122 GHz toggling rate at a power consumption of 141 mW.