Mid-infrared whispering gallery lasers

This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 /spl mu/m ring resonator was obtained near 3.0 /spl mu/m at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.