Temperature characteristics of long-wavelength quantum dash lasers on [110] and [111]A InP

This study reports on the fabrication and lasing characteristics of InAs quantum dot (QD) lasers on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). Continuous wave lasing at room temperature with low threshold (6.7 mA) has been achieved at the wavelength of 1.18 /spl mu/m. The threshold current of 6.7 mA is the lowest value so far achieved in QD lasers grown by MOCVD. The observed lasing wavelength is also the longest. Comparison with photoluminescence spectra of InAs QD lasers indicate that the observed lasing originates mainly from the ground state of InAs QDs.