Continuity in the development of ultra shallow junctions for 130-45 nm CMOS: the tool and annealing methods

The roadmap for ultra-shallow junction formation (USJ) includes implant spike anneal and solid-phase epitaxial re-growth. The roadmap for the junction contacts foresees transition from CoSi/sub 2/ to NiSi. The processes in the roadmap require extreme capabilities from RTP tools: heat-up and cool-down rates of hundreds of degrees per second, no pattern/emissivity dependence, precise temperature control, and operation at low temperature (starting from 200/spl deg/C for NiSi formation). This paper describes a tool which enables continuity in the development of USJ for current and future technology nodes. It provides high ramp rates (300-900/spl deg/C/sec), and operates in the temperature range of 100-1100/spl deg/C with precise temperature control.