Electrical study of 4H-SiC irradiated with swift heavy ions

Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied by deep level transient spectroscopy (DLTS) and electrical resistivity measurements. Capacitance-, current- and charge-DLTS spectra show the presence mainly of Z/sub 1/ (0.66 eV) deep levels similar to those obtained for electrons, neutrons or light ions. The temperature dependence of electrical resistivity of Schottky barriers is characterized by two stages not observed previously in silicon carbide for conventional type of irradiation.