Characterization and modeling of neutron induced transient response changes in Si:As IBC detectors

A model is presented which describes the temporal characteristics of an IBC detector in the regime dominated by dielectric relaxation. This finite temperature model accounts for the effects of acceptor state introduction under neutron irradiation. The model is valid under conditions of low detector current and small optical signal perturbations. The data also indicate at high acceptor concentrations and temperatures the transient response of these devices cannot be characterized by a single sweepout-dielectric relaxation model since, under these conditions, the depletion region extends throughout the entire doped layer.<
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