Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

The pixel detector in the BTeV experiment at the Tevatron (Fermilab) provides high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10/sup 14/ minimum ionizing particles/cm/sup 2//year. Radiation hardness of prototype n/sup +//n/p/sup +/ silicon pixel sensors has been investigated. We present electrical characterization curves for irradiated prototype n+/n/p+ sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6/spl times/10/sup 14/ protons/cm.