Near single-crystal electrical properties of polycrystalline HgI/sub 2/ produced by physical vapor deposition

Polycrystalline films of HgI/sub 2/ Prepared by Physical Vapor Deposition (PVD) exhibited electrical charge transport properties similar to those of single crystals. Transient charge transport (TCT) measurements were used to evaluate their electrical properties. The mobility /spl mu/, trapping time /spl tau/, and surface recombination velocity s of electrons or holes were determined by analyses of transient voltages developed across the sample in response to a drift of the corresponding charge carriers created by alpha particle absorption near one of the electrodes. Typical electron-, and hole mobilities were /spl mu//sub n/ = 88 cm/sup 2//V/spl middot/s and /spl mu//sub p/ = 4.1 cm/sup 2//V/spl middot/s, respectively; Trapping times were /spl tau//sub n/ >/spl tilde/16 /spl mu/s and /spl tau//sub p/