Comparison of a BSIM3V3 and EKV MOST model for a 0.5 um CMOS process and implications for analog circuit design

A BSIM3V3 and EKV model for a standard 0.5 um CMOS process has been evaluated for analog applications. Critical small-signal parameters including output conductance and transconductance efficiency were simulated for devices with gate lengths ranging from 0.5 um to 33 um. In addition, the small-signal parameters were measured on test devices with similar dimensions. The results highlight the difficulty of obtaining a model that accurately predicts the operation of low voltage analog circuits.