Recent results on particle detection with epitaxial SiC Schottky diodes

Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n/sup +/ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi /sup 90/Sr /spl beta/-source and with 5.48 MeV /spl alpha/-particles from /sup 241/Am. The response of the SiC devices, investigated over a range of thickness up to /spl sim/20/spl mu/m, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.