A new empirical nonlinear model for sub-250 nm channel MOSFET

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge conservation is taken into account, as the capacitances derive from a single charge expression. The model's parameters are first extracted, prior the model's implementation into a circuit simulator. It is validated through dc, ac, and RF large signal measurements compared to the simulation.