A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application

A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.