Metal-induced lateral crystallization of a-Si thin films by Ni-Co alloys and the electrical properties of poly-Si TFTs

We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the electrical characteristics of MILC poly-Si TFTs were considerably improved. In particular, a considerable decrease of TFT leakage current were achieved in both n-type and p-type devices.