Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance

A four-terminal RF MOSFET model to accurately describe the three-port network characteristics is presented. It has been found that the short-channel effect in the source-to-drain capacitance plays a critical role in predicting behavior of the MOSFET in the common-gate/body configuration. Performance of the developed model was verified with the device simulation results.