Topography and Schottky contact models applied to NiSi SALICIDE process [MOSFET applications]

Nickel monosilicide (NiSi) is considered to be a promising candidate for the self-aligned silicide (SALICIDE) material of 65 nm node MOSFETs and beyond. Therefore, an accurate simulation method for the NiSi SALICIDE process is required in order to design the optimum device. We realize, for the first time, the integrated simulation with silicide topography and Schottky contact models, and propose a calibration strategy of contact resistance. In this paper, we demonstrate the accurate simulation results of the silicide both in terms of its topography and contact resistance for the NiSi SALICIDE process.