Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, T/sub SOI/, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as T/sub SOI/ decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.