InAs quantum dot lasers on InP substrate

Single-stack InAs self-assembled quantum dot (QD) lasers based on InP substrates have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers based up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 /spl mu/m. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was obtained, which is as low as that caused by the refractive index change.