New plasma source development using a parallel resonance antenna for dry etching

Summary form only given, as follows. In sub-0.1 /spl mu/m scale device, the achievement of a uniform high-density, low pressure plasma source with a large area is major concern. Particularly, in the ultralarge scale integrated-circuit etching process, the development of dry etcher to handle larger area wafers is urgently required as the current 200 mm wafer diameter moves to 300 mm under situation of low electron temperature, uniform high-density plasma over large area, high-etch selectivity, no charge damage, etc. In this study, we have developed the new plasma source of VHF-ICP with a parallel resonance antenna for dry etcher.