Sb-based heterostructure backward diodes with improved sensitivity

In this paper, a promising alternative to these devices is the heterostructure backward diode based on the InAs/AlSb/GaSb material system. We have achieved record measured sensitivities through W-band, with an average zero-bias sensitivity of 3513 V/W and a biased sensitivity of 8124 V/W over the range of 1 to 70 GHz when driven from a 50 /spl Omega/ source. The 3 dB bandwidth has been measured to be greater than 110 GHz; a projected bandwidth of 143 GHz has been determined based on an equivalent circuit derived from measured s-parameters.