Surface preparation solutions for sub-90 nm IC technology

A single wafer immersion system has been shown to meet the particle, etch, and drying requirements for sub-90 nm process technologies. The system would be used for surface preparation applications including cleaning deep trench devices without water marks, critical cleans where ultra low Si and SiO/sub 2/ consumption is required, pre-diffusion cleans, and as a replacement of conventional, high concentration RCA wet cleaning processes.