Ge semiconductor devices for cryogenic power electronics: Part III

We have begun development of Ge power diodes and transistor for operation at cryogenic temperatures, down to /spl sim/ 20 K (/spl sim/ -250/spl deg/C), for use in spacecraft that will encounter low-temperature environments. Ge devices have advantages over Si devices for such deep cryogenic operation. Our initial development has yielded 10-A diodes with low forward voltage and reverse leakage, and reverse breakdown up to /spl sim/ 400 V, as well as insulated-gate FETs, both operating down to /spl sim/ 4 K (/spl sim/ minus; 270/spl deg/C).