Well-tempered combination of ultra-high voltage IGBT and diode rated 6.5kV

For High Voltage IGBT (HV-IGBT), it is required that a good matching with Free Wheeling Diode (FWD) is considered because of the latter's high transient forward voltage. Therefore, we studied transient characteristics of the free wheel mode in HV-IGBT and FWD paired operation by computer simulation and experiment, and optimized design aspects of HV-IGBT/FWD combination, rated 6.5kV, to achieve very low forward voltage drop, low Eon and Eoff, and a wide Safety Operational Area (SOA).