Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability

An ultra high power MOS gate device IEGT has developed. A new pressure contact package has been designed considering the gate wiring to avoid current imbalance among chips. The Cu post is also designed to attain homogenous pressure profile in the chip surface. The new package contains 42 IEGT and demonstrates high current turn-off over 6kA under 2.7kV DC bus voltage.