3.6 m/spl Omega/cm/sup 2/, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs

A normally-off 4H-SiC trenched-and-implanted vertical JFET (TI-VJFET) with a low specific on-resistance has been demonstrated. The low specific on-resistance (R/sub sp/) of 3.6 m/spl Omega/cm/sup 2/ is achieved for a blocking voltage (V/sub bl/) up to 1726V by eliminating the internal lateral JFET gates. The TI-VJFET technology developed is advantageous in comparison to other reported VJFET technologies because (a) it eliminates the need for epitaxial regrowth in middle of the device fabrication, (b) only one mask requires critical alignment throughout device fabrication, and (c) it provides intrinsically a much lower specific on-resistance due to the elimination of internal lateral JFET gates. The V/sub bl//sup 2//R/sub sp/ value of 830 MW/cm/sup 2/ for the TI-VJFET substantially surpasses all past records of both unipolar and bipolar SiC power switches.