Flash lamp annealing technology for ultra-shallow junction formation

As a new method of activating implanted impurities, flash lamp annealing (FLA) technology is proposed. By optimizing FLA and implantation conditions, junction depth of 14 nm and the sheet resistance of 770 /spl Omega//sq. with good junction leakage were successfully obtained for p/sup +//n junctions without wafer slip and warpage problems.