Field emission characteristics Si nanostructured films fabricated by pulsed laser deposition

In this paper, The Si nanostructured films were deposited by the pulsed Nd:YAG laser ( the fourth harmonic, /spl lambda/=266 nm) ablation technique using an oscillating Si target. The emission characteristics were measured in a diode configuration with an external Al anode placed at 9 /spl mu/m above the tips in a vacuum of 10/sup -5/ Pa. The experimental results suggest that the Si nanostructured film with many nanoprotrusions is one of the most promising cathodes for low threshold voltage and stable emission current.