Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 /spl Aring/ on conventional metal electrode

We have developed a plasma enhanced atomic layer deposition(PEALD) technology for high-k dielectrics such as Al/sub 2/O/sub 3/,Ta/sub 2/O/sub 5/ and HfO/sub 2/. Film quality and throughput of PEALD are far superior to that of ALD which has been spotlighted as a deposition technology for next generation semiconductor devices. We have obtained a extremely low equivalent oxide thickness(EOT) of 8 /spl Aring/ from HfO/sub 2/ film, which has not been reported in conventional metal-based memory capacitors up to now. It was confirmed that PEALD-Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5/ films are superior to those using any other deposition techniques and very useful as System-on-Chip(SoC) capacitors.