Charge carrier dynamic nonequilibrium in amorphous semiconductors

Generation-recombination rates of free charge carriers in an amorphous semiconductor in dynamic nonequilibrium conditions are accompanied by corresponding rates of trapped carriers reflecting back the dynamic response of free carriers. Using the Shockley-Read-Hall generation-recombination model, the author develops the analytical approach to a set of four differential equations describing the rates of change of free and trapped electrons and holes in thermal nonequilibrium conditions in amorphous semiconductors. These equations associated with continuity, Poisson, and transport equations provide the necessary analytical tools for the investigation of the time dependence of charge carriers in amorphous semiconductors.<
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