A highly efficient noise suppression technique for Si-based RFIC

A highly efficient CMOS process technique for suppressing the transmission of high-frequency noise induced by fast-switching MOS gates and/or spiral inductors through silicon substrate has been attained. The isolated n/sup +/-pocket structure designed in this work has proven to be very effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate. The protecting structures shall become a decisive measure in future success of Si-based RFIC applications.