High performance low current CDMA receiver front end using 0.18 /spl mu/m SiGe BiCMOS

Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining popularity for RF circuits in wireless applications due to high performance, low cost, high yield and levels of integration with mixed signal and digital CMOS circuits. A tri-band quad mode CDMA RF receiver front end is designed in a 0.18 /spl mu/m SiGe BiCMOS process that enabled LNAs with sub 1 dB noise figure and low-noise high-linearity mixers with low current consumption.