A high current gain 4H-SiC NPN power bipolar junction transistor

This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150/spl deg/C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm
²
) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm
²
, based on a drift layer design of 12 μm doped to 6×10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm
²
to 239 A/cm
²
(I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm
²
.