Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency f
_T
of 377 GHz with a simultaneous maximum power gain cutoff frequency f
_max
of 230 GHz at the current density Jc of 650 kA/cm
²
. Typical BV/sub CEO/ values exceed 3.7 V.