Design of a 4.4 to 5 GHz LNA in 0.25-/spl mu/m SiGe BiCMOS technology

This paper describes a low-noise amplifier (LNA), designed using a 0.25 /spl mu/m SiGe process, operating in the 4.45 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1 dB compression point is -6.2 dBm.