High-quality 1.3-/spl mu/m AlGaInAs MQW growth on a grating and its application to BH DFB-LDs for uncooled 10-Gb/s operation

A process for growing a high-quality AlGaInAs MQW on a grating has been developed and applied to fabricate a 1.3-/spl mu/m AlGaInAs BH DFB-LD. A low threshold current of 20 mA, a high slope efficiency of 0.31 W/A at 85/spl deg/C and a high CW operating temperature of 120/spl deg/C were obtained for a 250-/spl mu/m-long device with antireflective and high-reflective coated facets. A clear eye opening under 10-Gb/s direct modulation was also confirmed at 85/spl deg/C.