Double-gate HEMTs on transferred substrate

We report the fabrication and DC characterization of the first In/sub 0.52/Al/sub 0.48/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-gate HEMTs with simple-command (DG-HEMT-SC) and double-command (DG-HEMT-DC). These devices have been obtained by photolithography and by transferred substrate technique. Although layer structure has not been optimized, a maximum extrinsic transconductance of 460 mS/mm with a drain current I/sub ds/ of 160mA/mm is achieved for 1.5 /spl mu/m gate length DG-HEMT-SC. A large ratio Gm/I/sub ds/ of 3V/sup -1/ is obtained, which indicates improvement of charge command efficiency.