New multiwafer gas source MBE system for flexible and cost effective fabrication of GaInAsP/InP based opto-electronic devices

Wavelength emission of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP multiple quantum wells (MQW's) heterostructures -town in a multiwafer Gas Source Molecular Beam Epitaxy (GSMBE) is studied in details. Excellent photoluminescence wavelength uniformity is reported in 4/spl times/2-inch and 1/spl times/4-inch configurations, demonstrating the compatibility of GSMBE process with large scale 1.55 /spl mu/m telecom laser production. A strong dependence of wavelength dispersion on group-V to group-III ratio is reported and analyzed qualitatively.