Analysis of gate shot noise in MOSFETs with ultrathin gate oxides

The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and numerical device simulation. The effects of shot noise on the main two-port noise parameters (minimum noise figure, equivalent noise resistance, and optimum source admittance) and their dependence on oxide thickness and on the level of tunneling leakage current are analyzed.