Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiers

We have calculated the basic properties of multiple-quantum-well semiconductor optical amplifiers (SOAs) with active regions based on the newly proposed material GaInNAs. The band structure is modeled using k/spl middot/p theory and accounting for strain effects and the material gain in the context of free-carrier theory. The performance of structures with different nitrogen composition that emit at the same wavelength is modeled using a multisection approach accounting for spontaneous emission. The trends in the SOA performance related parameters are identified and explained.