Passivation property of SiN/sub x/:H/SiO/sub 2/ double layer formed by ammonia microwave remote plasma CVD method

We evaluated the passivation property of SiN/sub x/:H/SiO/sub 2/ double layers formed at various temperatures by using hydrogen radical annealing. The passivation property was analyzed by measuring effective lifetime and interface state density. The effective lifetime and the interface state density depended strongly on the deposition temperature of SiN/sub x/:H layers. The effect of hydrogen radical annealing for SiN/sub x/:H/SiO/sub 2/ double layer's was weakened with an increase in deposition temperature of SiN/sub x/:H. It was speculated that the annealing effect depending on deposition temperature was caused during deposition. At the deposition temperature of 350/spl deg/C, the annealing effect during deposition was nearly equal to the hydrogen radical annealing effect after the deposition. The annealing with ammonia afterglow plasma improved effectively the effective lifetime in SiO/sub 2//c-Si single layers. When the deposition time is chosen, the annealing effect should be taken into consideration.