An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication

Transimpedance amplifier (TIA) for 10 Gbps applications has been fabricated with InGaP/GaAs heterojunction bipolar transistors (HBTs). From the input-referred equivalent noise current density, the sensitivity was calculated. Eye diagram showed wide opened eye; when the input current was 58.6 /spl mu/ Ap-p the output voltage was 33m Vp-p and rising/falling times were 35 psec. The chip size of fabricated transimpedance amplifier was 0.7 /spl times/ 0.8 mm/sup 2/. The measurement result showed transimpedance gain of 50 dB/spl Omega/ and a -3dB bandwidth of 8.2 GHz. The differences between simulation and measurement were analyzed with chip layout considerations.