FDTD analysis of microwave active antenna including nonlinear model of FET transistor

In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules.