Combined device and system simulation for automotive application using SABER

For Automotive applications, device optimization requires both system and device level simulation in order to properly predict its performance and thermal response, especially in the case of adverse dynamic conditions. In this paper, the SABER model of IR’s power MOSFET IRFP2907 is validated in a half-bridge circuit using a low frequency two-pulse test. This model is then applied to simulate the performance of an inverter system. Simulation results accurately match the measurement. This work can be extended to evaluate power MOSFETs in other automotive applications such as ISA, EPAS and DC/DC conversion as well as IGBT and anti-parallel diodes in inverter switching applications.