Comparative study of 1800 V and 2400 V MCT and IGBT

The carrier lifetime and buffer-layer parameters determine the power dissipations of modern power devices. In this paper, based on simulation results, the trade-off relationships between the on-state conduction loss and turn-off loss of the 1800 V and 2400 V N-MCTs (N-MOS controlled thyristors) and IGBTs are studied comparatively. The simulation shows that the N-MCT has a better performance than that of the IGBT in the area studied.